Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: SEMIKRON SKM75GB176D Transistor, IGBT array&module, dual N-channel, 80 A, 2 V, 1.7 kV, Module26101+$680.251710+$656.383250+$653.3996100+$650.4161150+$645.6424250+$641.4654500+$637.28841000+$632.5147 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 pins87681+$36.742710+$34.6346100+$33.0685250+$32.8275500+$32.58661000+$32.31552500+$32.07465000+$31.9240 -
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Category: IGBTtransistorDescription: SEMIKRON SKM145GB128DN IGBT Array & Module Transistor, N Channel, 190A, 1.2kV, 1.2kV, Module9049 -
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Category: IGBTtransistorDescription: MCU 8Bit XC800 8051 CISC 24KB FLASH 2.5V/5V 64Pin TQFP92535+$19.589350+$18.7522200+$18.2834500+$18.16621000+$18.04902500+$17.91505000+$17.83137500+$17.7476 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1700V 540A 2200000mW 26Pin29491+$4326.969910+$4287.633825+$4267.965850+$4248.2977100+$4228.6297150+$4208.9616250+$4189.2936500+$4169.6255 -
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Category: IGBTtransistorDescription: MCU 8Bit XC800 8051 CISC 32KB FLASH 2.5V/5V 48Pin TQFP64355+$26.493550+$25.3613200+$24.7272500+$24.56871000+$24.41022500+$24.22915000+$24.11597500+$24.0026 -
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Category: IGBTtransistorDescription: MCU 8Bit XC800 8051 CISC 32KB FLASH 2.5V/3.3V 64Pin TQFP55945+$23.466750+$22.4638200+$21.9022500+$21.76181000+$21.62142500+$21.46105000+$21.36077500+$21.2604 -
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Category: IGBTtransistorDescription: MCU 8Bit XC800 8051 CISC 12KB FLASH 2.5V/5V 38Pin TSSOP94415+$21.298750+$20.3885200+$19.8788500+$19.75131000+$19.62392500+$19.47835000+$19.38737500+$19.2962 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 200A 833000mW 7Pin Double INT-A-PAK9853 -
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Category: IGBTtransistorDescription: VISHAY VS-EMF050J60U Transistor, IGBT array&module, NPN, 88 A, 1.8 V, 338 W, 600 V, Module84681+$479.692610+$467.178950+$457.5850100+$454.2480200+$451.7453500+$448.40831000+$446.32272000+$444.2371 -
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Category: IGBTtransistorDescription: INT-A-PAK11721+$2856.683510+$2830.713725+$2817.728750+$2804.7438100+$2791.7589150+$2778.7740250+$2765.7890500+$2752.8041 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.57221+$354.418510+$345.172850+$338.0844100+$335.6189200+$333.7698500+$331.30431000+$329.76332000+$328.2224 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 6A 40000mW 18Pin ECO-PAC 211661+$273.363110+$266.231850+$260.7646100+$258.8629200+$257.4367500+$255.53501000+$254.34652000+$253.1580 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.85731+$368.284110+$358.676650+$351.3110100+$348.7490200+$346.8275500+$344.26551000+$342.66432000+$341.0631 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.18101+$2699.885110+$2675.340725+$2663.068550+$2650.7963100+$2638.5241150+$2626.2519250+$2613.9797500+$2601.7075 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.61431+$157.466110+$153.358250+$150.2089100+$149.1135200+$148.2919500+$147.19651000+$146.51192000+$145.8273 -
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Category: IGBTtransistorDescription: INT-A-PAK64461+$1265.740310+$1254.233625+$1248.480250+$1242.7268100+$1236.9735150+$1231.2201250+$1225.4667500+$1219.7134 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.16231+$1181.117310+$1170.379925+$1165.011250+$1159.6424100+$1154.2737150+$1148.9050250+$1143.5363500+$1138.1676 -
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Category: IGBTtransistorDescription: IGBT 1200V 150A 543W INT-A-PAK61321+$2030.994910+$2012.531325+$2003.299550+$1994.0677100+$1984.8359150+$1975.6041250+$1966.3723500+$1957.1405 -
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Category: IGBTtransistorDescription: INT-A-PAK70721+$2828.889810+$2803.172625+$2790.314050+$2777.4554100+$2764.5969150+$2751.7383250+$2738.8797500+$2726.0211 -
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Category: IGBTtransistorDescription: IGBT 1200V 170A 658W INT-A-PAK54691+$464.524110+$452.406150+$443.1156100+$439.8841200+$437.4605500+$434.22911000+$432.20942000+$430.1897 -
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Category: IGBTtransistorDescription: IGBT 1200V 150A 446W INT-A-PAK53251+$643.937010+$621.342750+$618.5184100+$615.6941150+$611.1753250+$607.2213500+$603.26731000+$598.7484
